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The larger the resistance of the drive, the longer the turn-on time of MOSFET, and the longer the voltage and current overlap time in the switching time, the greater the switching loss. Therefore, the smaller the resistance, the better the drive resistance should be, provided that the drive resistance can provide enough damping to prevent the drive-current oscillation.When designing switch power supply or motor drive circuit with MOSFET, the factors such as on resistance, maximum voltage and max ...
When in 2006, researchers at Harvard University, US, said they have made the best nanowire transistors to date. The devices consisted of germanium/silicon core/shell nanowire field-effect transistors (FETs) using high-κ dielectrics and a metal top gate geometry."We showed that our current Ge/Si nanowire FETs perform three to four times better than silicon CMOS [devices]," Charles Lieber of Harvard told nanotechweb.org, "thus demonstrating for the first time that there is a clear a ...
A NIMS research group led by Jiangwei Liu (independent scientist, Research Center for Functional Materials) and Yasuo Koide (coordinating director in the Research Network and Facility Services Division) has succeeded for the first time in the world in developing logic circuits equipped with diamond-based MOSFETs (metal-oxide-semiconductor field-effect-transistors) at two different operation modes. This achievement is a first step toward the development of diamond integrated circuits operational  ...
 Toshiba America Electronic Components, Inc. (TAEC) has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Delivering high-speed performance and industry-leading1 low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives.The new MOSFETs utilize Toshiba’s latest generation low-voltage t ...
Isolation comes from ADI’s ADuM4135 isolated gate driver (see diag below), with IXYS IXDN630YI booster providing silicon carbide gate drive voltages.“The design provides customers with an isolated dual-gate driver switch for evaluating SiC mosfets in a number of topologies, said Microsemi. This includes modes optimised for half-bridge switching with synchronous dead time protection and asynchronous signal transfer with no protection.”It can also be configured for concurrent drive to study un-cla ...
Texas Instruments (TI) (NASDAQ:TXN) today introduced two new device families that help reduce size and weight in motor drive applications. When used together, DRV832x brushless DC (BLDC) gate drivers and CSD88584/99 NexFET™ Power Blocks require as little as 511 mm2, half the board space of competing solutions.The DRV832x BLDC gate drivers feature a smart gate-drive architecture that eliminates up to 24 components traditionally used to set the gate drive current while enabling designers ...
A MOSFET is a four-terminal device having source(S), gate (G), drain (D), and body (B) terminals. In general, the body of the MOSFET is in connection with the source terminal thus forming a three-terminal device such as a field-effect transistor. MOSFET is generally considered as a transistor and employed in both analog and digital circuits. This is the basic introduction to MOSFET. Let’s step into the world of MOSFET and find out its secret.CatalogI. What is MOSFET?1.1 Brief Introduction1.2 MOS ...