STP3NB80FP
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Manufacturer Part#:

STP3NB80FP

Product Category: IC Chips
Manufacturer: ST
Description:
  datasheetSTP3NB80FP Datasheet
Package: TO220F
Quantity: 1288 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: ST
Product Category: IC Chips
Features, Applications

TYPICAL RDS(on) = 4.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS


Symbol DS V DGR ) P tot dv/dt( ) V ISO tg Tj Parameter Drain-source Voltage = 0) Drain- gate Voltage ) G ate-source Voltage Drain Current (continuous) 25 C Drain Current (continuous) 100 C Drain Current (pulsed) T otal Dissipation o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature


Pulse width limited by safe operating area Limited only by maximum temperature allowed

TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max TO220-FP 3.57

Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose


Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting D = IAR , VDD 50 V) Max Valu 2.6 176 Unit A mJ


ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified) OFF

Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions = 0 Min. T yp. Max. Unit μA nA


DS = Max Rating Zero G ate Voltage Drain Current DS = Max Rating Gate-body Leakage Current (VDS 30 V


Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V GS Test Con ditions A 2.6 Min. 3 T yp. 4 4.6 Max. 5 6.5 Unit V A


Symbo iss s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Con ditions DS > ID(o x R DS(on )ma = 25 MHz = 0 Min. 1 T yp. Max. Unit S pF


Symbo l t d(on) Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions 1.3 A VGS 10 V Min. T yp. Max. 14 24 Unit ns nC


Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions 10 V Min. T yp. 17 22 Max. 24 31 Unit ns


Symbo l ISD I SDM rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 2.6 A VGS 2.6 A di/dt o C Test Con ditions Min. T yp. Max. 10.4 1.6 Unit μC A


Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % Pulse width limited by safe operating area

Search Part number : "STP3N" Included word is 15
Part Number Manufacturer Package Quantity Description
STP3N60 ST TO-220 4740
STP3N60E ST TO220 98
STP3NB90 ST TO220 485
STP3N60FP ST TO220 480
STP3NB90FP IR TO-220F 7172
STP3N62K3 ST TO-220-3 117 MOSFET N-CH 620V 2.7A TO-220
STP3NC60 ST TO-220 1100
STP3N90 ST TO-220 692
STP3NC60FP ST TO-220F 42682
STP3NA100 ST TO-220 71
STP3NC60Z ST TO-220 2465
STP3NK60Z ST TO-220-3 5318 MOSFET N-CH 600V 2.4A TO-220
STP3NK80Z ST TO-220-3 49454 MOSFET N-CH 800V 2.5A TO-220
STP3NA90 ST TO-220 500
STP3NA90FI ST TO220 118
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