IPD26N06S2L-35
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Manufacturer Part#:

IPD26N06S2L-35

Product Category: FETs - Single
Manufacturer: INF
Description: MOSFET N-CH 55V 30A TO252-3
  datasheetIPD26N06S2L-35 Datasheet
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity: 16815 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: INF
Product Category: FETs - Single
Series: OptiMOS
Packaging: Reel
Part-Aliases: IPD26N06S2L35ATMA1 IPD26N06S2L35ATMA2 SP001063630
Unit-Weight: 0.139332 oz
Mounting-Style: SMD/SMT
Tradename: OptiMOS
Package-Case: TO-252-3
Technology: Si
Number-of-Channels: 1 Channel
Configuration: Single
Transistor-Type: 1 N-Channel
Pd-Power-Dissipation: 68 W
Maximum-Operating-Temperature: + 175 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 11 ns
Rise-Time: 18 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 26 A
Vds-Drain-Source-Breakdown-Voltage: 55 V
Rds-On-Drain-Source-Resistance: 35 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 26 ns
Typical-Turn-On-Delay-Time: 5 ns
Channel-Mode: Enhancement
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