NE3512S02-T1C-A
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Manufacturer Part#:

NE3512S02-T1C-A

Product Category: RF FETs
Manufacturer: NEC
Description: HJ-FET NCH 13.5DB S02
  NE3512S02-T1C-A Datasheet
Package: 4-SMD, Flat Leads
Quantity: 5615 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: NEC
Product Category: RF FETs
Packaging: Reel
Mounting-Style: SMD/SMT
Package-Case: S0-2
Technology: GaAs
Transistor-Type: HFET
Gain: 13.5 dB
Pd-Power-Dissipation: 165 mW
Maximum-Operating-Temperature: + 125 C
Operating-Frequency: 12 GHz
Id-Continuous-Drain-Current: 70 mA
Vds-Drain-Source-Breakdown-Voltage: 4 V
Transistor-Polarity: N-Channel
Forward-Transconductance-Min: 55 mS
Vgs-Gate-Source-Breakdown-Voltage: - 3 V
NF-Noise-Figure: 0.35 dB
Search Part number : "NE351" Included word is 6
Part Number Manufacturer Package Quantity Description
NE3512S02-T1D NEC TO-50 6019
NE3512S02-T1D-A RENESAS TO-50 14605 RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
NE3512S02-T1D-A/JT TO-50 65360
NE3514S02-T1D NEC SMD 800
NE3515S02-T1C-A RENESAS 4-SMD, Flat Leads 2647 FET RF HFET 12GHZ 2V 10MA S02
NE3512S02 NEC TO-50 33860
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