SIR836DP-T1-GE3
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Manufacturer Part#:

SIR836DP-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 40V 21A PPAK SO-8
  datasheetSIR836DP-T1-GE3 Datasheet
Package: PowerPAK® SO-8
Quantity: 32250 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIR836DP-GE3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SO-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR SO-8
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 15.6W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 40V
Input-Capacitance-Ciss-Vds: 600pF @ 20V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 21A (Tc)
Rds-On-Max-Id-Vgs: 19 mOhm @ 10A, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 18nC @ 10V
Pd-Power-Dissipation: 15.6 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 21 A
Vds-Drain-Source-Breakdown-Voltage: 40 V
Rds-On-Drain-Source-Resistance: 19 mOhms
Transistor-Polarity: N-Channel
Search Part number : "SIR83" Included word is 2
Part Number Manufacturer Package Quantity Description
SIR838DP-T1-GE3 VISHAY PowerPAKR SO-8 534 MOSFET N-CH 150V 35A PPAK SO-8
SiR836DP-T1-E3 VISHAY QFN8 35860
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