SI7716ADN-T1-GE3
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Manufacturer Part#:

SI7716ADN-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 30V 16A 1212-8
  SI7716ADN-T1-GE3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 313200 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7716ADN-GE3
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single Quad Drain Triple Source
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 27.7W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 846pF @ 15V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 16A (Tc)
Rds-On-Max-Id-Vgs: 13.5 mOhm @ 10A, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 23nC @ 10V
Pd-Power-Dissipation: 3.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 10 ns
Rise-Time: 12 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 16 A
Vds-Drain-Source-Breakdown-Voltage: 30 V
Rds-On-Drain-Source-Resistance: 13.5 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 14 ns
Typical-Turn-On-Delay-Time: 15 ns
Forward-Transconductance-Min: 24 S
Channel-Mode: Enhancement
Search Part number : "SI771" Included word is 3
Part Number Manufacturer Package Quantity Description
SI7716DN-T1-E3 VISHAY 9165
SI7716ADN VISHAY QFN8 3203
Si7716ADN-T1-E3 VISHAY QFN8 101022
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