SI7309DN-T1-E3
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Manufacturer Part#:

SI7309DN-T1-E3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 60V 8A 1212-8
  datasheetSI7309DN-T1-E3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 3958 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7309DN-E3
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 19.8W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: 600pF @ 30V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 8A (Tc)
Rds-On-Max-Id-Vgs: 115 mOhm @ 3.9A, 10V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 22nC @ 10V
Pd-Power-Dissipation: 3.2 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 65 C
Fall-Time: 35 ns 33 ns
Rise-Time: 80 ns 15 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 3.9 A
Vds-Drain-Source-Breakdown-Voltage: - 60 V
Rds-On-Drain-Source-Resistance: 115 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 33 ns 30 ns
Typical-Turn-On-Delay-Time: 25 ns 10 ns
Channel-Mode: Enhancement
Search Part number : "SI730" Included word is 6
Part Number Manufacturer Package Quantity Description
SI7300A SK SIP18 465
SI7302DN-T1-E3 VISHAY PowerPAK® 1212-8 35860 MOSFET N-CH 220V 8.4A 1212-8
SI7308DN-T1-E3 VISHAY PowerPAK® 1212-8 10298 MOSFET N-CH 60V 6A 1212-8
SI7308DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 7295 MOSFET N-CH 60V 6A 1212-8
SI7308DN-TI-GE3 VISHAY QFN 4060
SI7309DN-T1-E VISHAY QFN8 78
SI7309DN-T1-E3 RELATED PRODUCT PICTURE
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  • SI7300A
  • SI7302DN-T1-E3
  • SI7308DN-T1-E3
  • SI7308DN-T1-GE3
  • SI7308DN-TI-GE3
  • SI7309DN-T1-E
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