SI7758DP-T1-GE3
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Manufacturer Part#:

SI7758DP-T1-GE3

Product Category: FETs - Single
Manufacturer: VISHAY
Description: MOSFET N-CH 30V 60A PPAK SO-8
  datasheetSI7758DP-T1-GE3 Datasheet
Package: PowerPAK® SO-8
Quantity: 33295 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: VISHAY
Product Category: FETs - Single
Packaging: Reel
Part-Aliases: SI7758DP-GE3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Package-Case: SO-8
Technology: Si
Number-of-Channels: 1 Channel
Configuration: Single with Schottky Diode
Transistor-Type: 1 N-Channel
Pd-Power-Dissipation: 6.25 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 30 ns
Rise-Time: 25 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 34.6 A
Vds-Drain-Source-Breakdown-Voltage: 30 V
Rds-On-Drain-Source-Resistance: 2.9 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 56 ns
Typical-Turn-On-Delay-Time: 53 ns
Channel-Mode: Enhancement
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