SI6423DQ-T1-E3
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Manufacturer Part#:

SI6423DQ-T1-E3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 12V 8.2A 8-TSSOP
  datasheetSI6423DQ-T1-E3 Datasheet
Package: 8-TSSOP (0.173", 4.40mm Width)
Quantity: 7894 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI6423DQ-T1
Unit-Weight: 0.005573 oz
Mounting-Style: SMD/SMT
Package-Case: 8-TSSOP (0.173", 4.40mm Width)
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: 8-TSSOP
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 1.05W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 8.2A (Ta)
Rds-On-Max-Id-Vgs: 8.5 mOhm @ 9.5A, 4.5V
Vgs-th-Max-Id: 800mV @ 400μA
Gate-Charge-Qg-Vgs: 110nC @ 5V
Pd-Power-Dissipation: 1.05 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 75 ns
Rise-Time: 75 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 8.2 A
Vds-Drain-Source-Breakdown-Voltage: - 12 V
Rds-On-Drain-Source-Resistance: 8.5 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 270 ns
Typical-Turn-On-Delay-Time: 50 ns
Channel-Mode: Enhancement
Search Part number : "SI642" Included word is 5
Part Number Manufacturer Package Quantity Description
SI6423DQ-T1-GE3 VISHAY 8-TSSOP (0.173", 4.40mm Width) 2190 MOSFET P-CH 12V 8.2A 8-TSSOP
SI6426DQ FSC TSSOP-8 5603
SI6426DQ-T1 SILICONIX TSSOP-8 67384
SI6426DR SI TSSOP8 800
SI6423DQ VISHAY TSSOP-8 3560
SI6423DQ-T1-E3 RELATED PRODUCT PICTURE
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