SI7960DP-T1-E3
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Manufacturer Part#:

SI7960DP-T1-E3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
  datasheetSI7960DP-T1-E3 Datasheet
Package: PowerPAK® SO-8 Dual
Quantity: 2365 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7960DP-E3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SO-8 Dual
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: PowerPAKR SO-8 Dual
Configuration: Dual
FET-Type: 2 N-Channel (Dual)
Power-Max: 1.4W
Transistor-Type: 2 N-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 6.2A
Rds-On-Max-Id-Vgs: 21 mOhm @ 9.7A, 10V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 75nC @ 10V
Pd-Power-Dissipation: 1.4 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 12 ns
Rise-Time: 12 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 6.2 A
Vds-Drain-Source-Breakdown-Voltage: 60 V
Rds-On-Drain-Source-Resistance: 21 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 60 ns
Typical-Turn-On-Delay-Time: 12 ns
Channel-Mode: Enhancement
Search Part number : "SI796" Included word is 4
Part Number Manufacturer Package Quantity Description
SI7962DP-T1-E3 Vishay Siliconix PowerPAK® SO-8 Dual 530 MOSFET 2N-CH 40V 7.1A PPAK SO-8
SI7964DP SI QFN-8 2360
SI7964DP-T1-E3 Vishay Siliconix PowerPAK® SO-8 Dual 480 MOSFET 2N-CH 60V 6.1A PPAK SO-8
SI7960DP SI QFN-8 441
SI7960DP-T1-E3 RELATED PRODUCT PICTURE
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