SIZ700DT-T1-GE3
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Manufacturer Part#:

SIZ700DT-T1-GE3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 20V 16A PPAK 1212-8
  datasheetSIZ700DT-T1-GE3 Datasheet
Package: 6-PowerPair™
Quantity: 232803 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Tape & Reel (TR)
Part-Aliases: SIZ700DT-GE3
Mounting-Style: SMD/SMT
Package-Case: 6-PowerPair?
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 6-PowerPair?
Configuration: Dual
FET-Type: 2 N-Channel (Half Bridge)
Power-Max: 2.36W, 2.8W
Transistor-Type: 2 N-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 1300pF @ 10V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 16A
Rds-On-Max-Id-Vgs: 8.6 mOhm @ 15A, 10V
Vgs-th-Max-Id: 2.2V @ 250μA
Gate-Charge-Qg-Vgs: 35nC @ 10V
Pd-Power-Dissipation: 2.36 W 2.8 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 8 ns 10 ns
Rise-Time: 9 ns 8 ns
Vgs-Gate-Source-Voltage: 16 V
Id-Continuous-Drain-Current: 16 A
Vds-Drain-Source-Breakdown-Voltage: 20 V
Rds-On-Drain-Source-Resistance: 7 mOhms 4.7 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 25 ns 47 ns
Typical-Turn-On-Delay-Time: 8 ns 12 ns
Forward-Transconductance-Min: 60 S 100 S
Channel-Mode: Enhancement
Search Part number : "SIZ70" Included word is 2
Part Number Manufacturer Package Quantity Description
SIZ702DT-T1-GE3 Vishay Siliconix 6-PowerPair™ 830 MOSFET 2N-CH 30V 16A POWERPAIR
SIZ704DT-T1-GE3 Vishay Siliconix 6-PowerPair™ 780 MOSFET 2N-CH 30V 12A PPAK 1212-8
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