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FDB3632
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Manufacturer Part#:

FDB3632

Product Category: FETs - Single
Manufacturer: Fairchild Semiconductor
Description: MOSFET N-CH 100V 80A D2PAK
  FDB3632 Datasheet
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Quantity: 10661 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Fairchild Semiconductor
Product Category: FETs - Single
Series: PowerTrenchR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: FDB3632_NL
Unit-Weight: 0.046296 oz
Mounting-Style: SMD/SMT
Package-Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technology: Si
Operating-Temperature: -55°C ~ 175°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: D2PAK
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 310W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 6000pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 12A (Ta), 80A (Tc)
Rds-On-Max-Id-Vgs: 9 mOhm @ 80A, 10V
Vgs-th-Max-Id: 4V @ 250μA
Gate-Charge-Qg-Vgs: 110nC @ 10V
Pd-Power-Dissipation: 310 W
Maximum-Operating-Temperature: + 175 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 46 ns
Rise-Time: 39 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 80 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Rds-On-Drain-Source-Resistance: 7.5 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 96 ns
Typical-Turn-On-Delay-Time: 30 ns
Channel-Mode: Enhancement
Search Part number : "FDB36" Included word is 5
Part Number Manufacturer Package Quantity Description
FDB3652 FAIRCHILD TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 16788 MOSFET N-CH 100V 61A TO-263AB
FDB3672 ON TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 4446 MOSFET N-CH 100V 44A D2PAK
FDB3672_F085 FSC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8852 MOSFET N-CH 100V 44A D2PAK
FDB3682 FSC TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 16689 MOSFET N-CH 100V 6A TO-263AB
FDB3682-NL FAIRCHILD TO-263 660
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