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MTB50P03HDLT4G
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Manufacturer Part#:

MTB50P03HDLT4G

Product Category: FETs - Single
Manufacturer: ON Semiconductor
Description: MOSFET P-CH 30V 50A D2PAK
  MTB50P03HDLT4G Datasheet
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Quantity: 27296 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: ON Semiconductor
Product Category: FETs - Single
Series: MTB50P03HDL
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.139332 oz
Mounting-Style: SMD/SMT
Package-Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: D2PAK
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 2.5W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 4900pF @ 25V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 50A (Tc)
Rds-On-Max-Id-Vgs: 25 mOhm @ 25A, 5V
Vgs-th-Max-Id: 2V @ 250μA
Gate-Charge-Qg-Vgs: 100nC @ 5V
Pd-Power-Dissipation: 125 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 218 ns
Rise-Time: 340 ns
Vgs-Gate-Source-Voltage: 15 V
Id-Continuous-Drain-Current: 50 A
Vds-Drain-Source-Breakdown-Voltage: - 30 V
Rds-On-Drain-Source-Resistance: 25 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 90 ns
Typical-Turn-On-Delay-Time: 22 ns
Forward-Transconductance-Min: 20 S
Channel-Mode: Enhancement
Search Part number : "MTB50" Included word is 11
Part Number Manufacturer Package Quantity Description
MTB50P03HG ON TO263 475
MTB50N03 ON TO-263 118
MTB50N06EL MOT TO-263 803
MTB50N06HD ON TO-263 8560
MTB50N06V ON TO-263 3770
MTB50N06VL ON TO263 3882
MTB50N06VT4 ON TO263 2910
MTB50N06VT4G ON TO-263 3890
MTB50P03 ON TO-263 3860
MTB50P03HDLG ON TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 8682 MOSFET P-CH 30V 50A D2PAK
MTB50P03HDLT4 ON TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 37877 MOSFET P-CH 30V 50A D2PAK
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