SI1965DH-T1-E3
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Manufacturer Part#:

SI1965DH-T1-E3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2P-CH 12V 1.3A SC70-6
  SI1965DH-T1-E3 Datasheet
Package: 6-TSSOP, SC-88, SOT-363
Quantity: 7560 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Tape & Reel (TR)
Part-Aliases: SI1965DH-E3
Unit-Weight: 0.000988 oz
Mounting-Style: SMD/SMT
Package-Case: 6-TSSOP, SC-88, SOT-363
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: SC-70-6 (SOT-363)
Configuration: Dual
FET-Type: 2 P-Channel (Dual)
Power-Max: 1.25W
Transistor-Type: 2 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: 120pF @ 6V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 1.3A
Rds-On-Max-Id-Vgs: 390 mOhm @ 1A, 4.5V
Vgs-th-Max-Id: 1V @ 250μA
Gate-Charge-Qg-Vgs: 4.2nC @ 8V
Pd-Power-Dissipation: 740 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 27 ns
Rise-Time: 27 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 1.14 A
Vds-Drain-Source-Breakdown-Voltage: - 12 V
Rds-On-Drain-Source-Resistance: 390 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 15 ns
Typical-Turn-On-Delay-Time: 12 ns
Channel-Mode: Enhancement
Search Part number : "SI196" Included word is 6
Part Number Manufacturer Package Quantity Description
Si1965DH Vishay SC70-6 103
SI1965DH-E3 VISHAY 6-TSSOP, SC-88, SOT-363 14060 MOSFET 2P-CH 12V 1.3A SC70-6
Si1965DH-T1-GE3 Vishay Siliconix 6-TSSOP, SC-88, SOT-363 10060 MOSFET 2P-CH 12V 1.3A SC70-6
Si1967DH Vishay SC70-6 100
SI1967DH-T1-E3 Vishay Siliconix 6-TSSOP, SC-88, SOT-363 5520 MOSFET 2P-CH 20V 1.3A SC70-6
SI1969DH-E3 VISHAY SOT363 3560
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