FX70SMJ-03
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Manufacturer Part#:

FX70SMJ-03

Product Category: IC Chips
Manufacturer: RENESAS
Description:
  datasheetFX70SMJ-03 Datasheet
Package: TO-3P
Quantity: 1330 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: RENESAS
Product Category: IC Chips
Features, Applications

Features, Applications


Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.


The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.


Renesas Technology Corp. Customer Support Dept. April 1, 2003

4V DRIVE VDSS............................................................... -30V rDS (ON) (MAX)............................................. 12.3m ID.................................................................... -70A Integrated Fast Recovery Diode (TYP.)...........70ns


APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.

Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) = 10μH Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value


Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter


Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time


POWER DISSIPATION DERATING CURVE 250 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA



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