SI5475DDC-T1-GE3
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Manufacturer Part#:

SI5475DDC-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 12V 6A 1206-8
  datasheetSI5475DDC-T1-GE3 Datasheet
Package: 8-SMD, Flat Lead
Quantity: 6817 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI5475DDC-GE3
Unit-Weight: 0.002998 oz
Mounting-Style: SMD/SMT
Package-Case: 8-SMD, Flat Lead
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: 1206-8 ChipFET?
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 5.7W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: 1600pF @ 6V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 6A (Tc)
Rds-On-Max-Id-Vgs: 32 mOhm @ 5.4A, 4.5V
Vgs-th-Max-Id: 1V @ 250μA
Gate-Charge-Qg-Vgs: 50nC @ 8V
Pd-Power-Dissipation: 1.2 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 40 ns
Rise-Time: 40 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 6 A
Vds-Drain-Source-Breakdown-Voltage: - 12 V
Rds-On-Drain-Source-Resistance: 32 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 45 ns
Typical-Turn-On-Delay-Time: 20 ns
Channel-Mode: Enhancement
Search Part number : "SI547" Included word is 6
Part Number Manufacturer Package Quantity Description
SI5471DC Vishay 1206-8 3725
SI5473DC-T1 VISHAY 1206-8 42360
SI5473DC-T1-E3 VISHAY 8-SMD, Flat Lead 2460 MOSFET P-CH 12V 5.9A 1206-8
SI5475BDC-T1-E3 VISHAY 8-SMD, Flat Lead 57155 MOSFET P-CH 12V 6A 1206-8
SI5475DC-T1 VISHAY 1206-8 4645
SI5475DC-T1-E3 VISHAY 8-SMD, Flat Lead 189689 MOSFET P-CH 12V 5.5A 1206-8
SI5475DDC-T1-GE3 RELATED PRODUCT PICTURE
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  • SI5471DC
  • SI5473DC-T1
  • SI5473DC-T1-E3
  • SI5475BDC-T1-E3
  • SI5475DC-T1
  • SI5475DC-T1-E3
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