HGTP20N35G3VL
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Manufacturer Part#:

HGTP20N35G3VL

Product Category: IC Chips
Manufacturer: FAIRCHILD
Description:
  datasheetHGTP20N35G3VL Datasheet
Package:
Quantity: 560 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: FAIRCHILD
Product Category: IC Chips
Features, Applications

Features, Applications


20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

Features

Logic Level Gate Drive Internal Voltage Clamp ESD Gate Protection = 175oC Ignition Energy Capable


Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.


PACKAGING AVAILABILITY PART NUMBER HGT1S20N35G3VL HGT1S20N35G3VLS PACKAGE T0-262AA T0-263AB BRAND 20N35GVL


NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., HGT1S20N35G3VLS9A.


Collector-Emitter Bkdn Voltage = 1k. BVCER Emitter-Collector Bkdn Voltage At 10mA. BVECS Collector Current Continuous At VGE = +25oC, Figure IC25 At VGE +100oC. IC100 Gate-Emitter-Voltage (Note). VGES Inductive Switching Current +25o C. ISCIS +175 C. ISCIS Collector to Emitter Avalanche Energy = +25oC. EAS Power Dissipation Total +25oC. PD Power Dissipation Derating > +25oC. Operating and Storage Junction Temperature Range. TJ, TSTG Maximum Lead Temperature for Soldering. TL Electrostatic Voltage 100pF, 1500. ESD NOTE: May be exceeded if IGEM is limited to 10mA.


= +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage SYMBOL BVCES TEST CONDITIONS = 10mA, VGE = -40oC Collector-Emitter Breakdown Voltage BVCER = 10mA VGE = 0V RGE = -40oC Gate-Emitter Plateau Voltage VGEP = 10A VCE = 10A VGE = 5V VCE = 10mA VCE = 250V VCE = 250V Collector-Emitter Saturation Voltage VCE(SAT) = 10A VGE = +25oC MIN TYP MAX UNITS


Emitter-Collector Breakdown Voltage Collector-Emitter Leakage Current

Gate Series Resistance Gate-Emitter Resistance Gate-Emitter Leakage Current Gate-Emitter Breakdown Voltage Current Turn-Off Time-Inductive Load


PULSE DURATION = 250μs, DUTY CYCLE <0.5%, VCE = 10V ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 3.0V 2.5V VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) PULSE DURATION = 250μs, DUTY CYCLE = +25oC


FIGURE 3. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE

FIGURE 4. COLLECTOR-EMITTER CURRENT AS A FUNCTION OF SATURATION VOLTAGE



Search Part number : "HGTP2" Included word is 8
Part Number Manufacturer Package Quantity Description
HGTP20N36G3VL FAIRCHIL TO-220 460
HGTP20N60A4 Fairchild Semiconductor TO-220-3 30910 IGBT 600V 70A 290W TO220AB
HGTP20N60A4 G20N60A4 FSC TO220 1220
HGTP20N60B3 FSC TO-220 1078
HGTP20N60B3D FAIRCHILD TO220 118
HGTP20N60C3 FSC TO-220 70
HGTP2N120BN FAIRCHILD TO-220 674
HGTP2N120CN Fairchild Semiconductor TO-220-3 23441 IGBT 1200V 13A 104W TO220AB
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