CSD19533Q5A
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Manufacturer Part#:

CSD19533Q5A

Product Category: FETs - Single
Manufacturer: TI
Description: MOSFET N-CH 100V 100A 8SON
  datasheetCSD19533Q5A Datasheet
Package: 8-TDFN Exposed Pad
Quantity: 88 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: TI
Product Category: FETs - Single
Series: CSD19533Q5A
Packaging: Reel
Mounting-Style: SMD/SMT
Tradename: NexFET
Package-Case: VSON-FET-8
Technology: Si
Number-of-Channels: 1 Channel
Configuration: Single
Transistor-Type: 1 N-Channel
Pd-Power-Dissipation: 3.2 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 5 ns
Rise-Time: 6 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 75 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Vgs-th-Gate-Source-Threshold-Voltage: 2.8 V
Rds-On-Drain-Source-Resistance: 8.7 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 16 ns
Typical-Turn-On-Delay-Time: 6 ns
Qg-Gate-Charge: 27 nC
Forward-Transconductance-Min: 63 ns
Channel-Mode: Enhancement
Search Part number : "CSD19" Included word is 2
Part Number Manufacturer Package Quantity Description
CSD19531KCS TI TO-220-3 102 MOSFET N-CH 100V 100A TO220-3
CSD19534Q5A Texas Instruments 83 MOSFET N-CH 100V 137A 8SON
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