SI6973DQ-T1-E3
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Manufacturer Part#:

SI6973DQ-T1-E3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.1A 8TSSOP
  SI6973DQ-T1-E3 Datasheet
Package: 8-TSSOP (0.173", 4.40mm Width)
Quantity: 13573 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Tape & Reel (TR)
Part-Aliases: SI6973DQ-E3
Unit-Weight: 0.005573 oz
Mounting-Style: SMD/SMT
Tradename: TrenchFET
Package-Case: 8-TSSOP (0.173", 4.40mm Width)
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 8-TSSOP
Configuration: Dual
FET-Type: 2 P-Channel (Dual)
Power-Max: 830mW
Transistor-Type: 2 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 4.1A
Rds-On-Max-Id-Vgs: 30 mOhm @ 4.8A, 4.5V
Vgs-th-Max-Id: 450mV @ 250μA (Min)
Gate-Charge-Qg-Vgs: 30nC @ 4.5V
Pd-Power-Dissipation: 830 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 27 ns
Rise-Time: 27 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 4.1 A
Vds-Drain-Source-Breakdown-Voltage: - 20 V
Rds-On-Drain-Source-Resistance: 30 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 93 ns
Typical-Turn-On-Delay-Time: 27 ns
Channel-Mode: Enhancement
Search Part number : "SI697" Included word is 2
Part Number Manufacturer Package Quantity Description
SI6973DQ-T1-GE3 Vishay Siliconix 8-TSSOP (0.173", 4.40mm Width) 4236 MOSFET 2P-CH 20V 4.1A 8TSSOP
SI6975DQ-T1-E3 Vishay Siliconix 8-TSSOP (0.173", 4.40mm Width) 752 MOSFET 2P-CH 12V 4.3A 8TSSOP
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