HGTG5N120CND
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HGTG5N120CND

Product Category: IC Chips
Manufacturer: FAIRCHILD
Description:
  datasheetHGTG5N120CND Datasheet
Package: TO-247
Quantity: 115 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: FAIRCHILD
Product Category: IC Chips
Features, Applications

Features, Applications


25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49307.


Features

25oC 1200V Switching SOA Capability Typical Fall Time. = 150oC Short Circuit Rating Low Conduction Loss Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.fairchildsemi.com Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S5N120CNDS9A.


= 25oC, Unless Otherwise Specified HGTP5N120CND HGT1S5N120CNDS Collector to Emitter Voltage. BVCES Collector Current Continuous 110oC. IC110 Collector Current Pulsed (Note 1). ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed. VGEM Switching Safe Operating Area = 150oC, Figure 2. SSOA Power Dissipation Total 25oC. PD Power Dissipation Derating > 25oC. Operating and Storage Junction Temperature Range. TJ, TSTG Maximum Lead Temperature for Soldering Leads 0.063in (1.6mm) from case for 10s. TL Package Body for 10s, see Tech Brief 334. Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V. tSC Short Circuit Withstand Time (Note 2) at VGE = 12V. tSC


CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 25.

= 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS = 250μA, VGE = 0V VCE = 150oC MIN 6.0 25 TYP MAX UNITS ns μJ


Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge


Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3)


PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON EOFF VEC trr IEC = 5.5A IEC = 5.5A, dIEC/dt = 200A/μs IEC = 1A, dIEC/dt = 200A/μs Thermal Resistance Junction To Case RJC IGBT Diode NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode = 150oC ICE = 5.5A VCE = 960V VGE = 5mH Test Circuit (Figure 20) MIN TYP MAX UNITS V ns


FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 



Search Part number : "HGTG5" Included word is 2
Part Number Manufacturer Package Quantity Description
HGTG5N120BD FAIRCHILD TO-247 93
HGTG5N120BND Fairchild Semiconductor TO-247-3 9330 IGBT 1200V 21A 167W TO247
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