HGTG20N120CN
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HGTG20N120CN

Product Category: IC Chips
Manufacturer: FAIRCHILD
Description:
  datasheetHGTG20N120CN Datasheet
Package: TO-247
Quantity: 77 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: FAIRCHILD
Product Category: IC Chips
Features, Applications

Features, Applications


The is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49289.


Features

25oC 1200V Switching SOA Capability Typical Fall Time. = 150oC Short Circuit Rating Low Conduction Loss Avalanche Rated Temperature Compensating SABERTM Model www.fairchildsemi.com


NOTE: When ordering, use the entire part number

Absolute Maximum Ratings = 25oC, Unless Otherwise Specified

HGTG20N120CN Collector to Emitter Voltage.BVCES Collector Current Continuous 110oC. IC110 Collector Current Pulsed (Note 1). ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed.VGEM Switching Safe Operating Area = 150oC (Figure 2). SSOA Power Dissipation Total 25oC. PD Power Dissipation Derating > 25oC. Forward Voltage Avalanche Energy (Note 2). EAV Operating and Storage Junction Temperature Range. TJ, TSTG Maximum Lead Temperature for Soldering. TL Short Circuit Withstand Time (Note 3) at VGE = 15V.tSC Short Circuit Withstand Time (Note 3) at VGE to W W/oC mJ


CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.


NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE 25oC. 3. VCE(PK) = 3.

= 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS = 250μA, VGE = 10mA, VGE = 0V VCE = 150oC MIN TYP MAX UNITS ns mJ


Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current


Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4)


VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF

PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RJC TEST CONDITIONS IGBT and Diode = 150oC ICE = 20A VCE = 960V VGE RG 1mH Test Circuit (Figure 18) MIN TYP MAX UNITS ns mJ


FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) R?JC = 0.32oC/W, SEE NOTES


FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT


Search Part number : "HGTG2" Included word is 15
Part Number Manufacturer Package Quantity Description
HGTG20N60C3D Fairchild Semiconductor TO-3P-3, SC-65-3 14560 IGBT 600V 45A 164W TO247
HGTG24N60D1 HARRIS TO-3P 1071
HGTG24N60D1D HIR TO-247 108
HGTG27N120BN Fairchild Semiconductor TO-247-3 4960 IGBT 1200V 72A 500W TO247
HGTG27N60C3R HARRIS TO-3P 3014
HGTG20N120C3D FAIRCHILD TO-247 550
HGTG20N120CND FAIRCHILD TO-247 81
HGTG20N50C1D HARRIS TO-3P 437
HGTG20N50E1D FSC TO-247 157
HGTG20N60A3 FSC TO-3P 118
HGTG20N60A4 Fairchild Semiconductor TO-247-3 685 IGBT 600V 70A 290W TO247
HGTG20N60A4D Fairchild Semiconductor TO-247-3 4430 IGBT 600V 70A 290W TO247
HGTG20N60B3 Fairchild Semiconductor TO-247-3 3799 IGBT 600V 40A 165W TO247
HGTG20N60B3D Fairchild Semiconductor TO-247-3 17049 IGBT 600V 40A 165W TO247
HGTG20N60C3 FSC TO-247 21300
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