HAT2285WP
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Manufacturer Part#:

HAT2285WP

Product Category: IC Chips
Manufacturer: RENESAS
Description:
  datasheetHAT2285WP Datasheet
Package: WPAK
Quantity: 173811 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: RENESAS
Product Category: IC Chips
Features, Applications

Features, Applications

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Features

Low on-resistance Capable 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode

RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D)

1, 3 Source 2, 4 Gate Drain MOS2 and Schottky Barrier Diode

Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings MOS2 & SBD to +150 Unit °C


Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 1.0 10 Typ Max Unit V ns Test Conditions = 10 mA, VGS = 0 VGS ±20 V, VDS = 0 VDS 30 V, VGS = 0 VDS 7 A, VGS 7 A, VGS 7 A, VDS V Note3 VDS 10 V, VGS = 1MHz VDD 10 V, VGS 14 A VGS 7 A, VDD 14 A, VGS =14 A, VGS = 0 diF/ = 100 A/μs


Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Schottky Barrier diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VF trr Min 1.4 24 Typ Max Unit V ns Test Conditions = 10 mA, VGS = 0 VGS ±12 V, VDS = 0 VDS 30 V, VGS = 0 VDS =11 A, VGS 11 A, VGS 11 A, VDS V Note3 VDS 10 V, VGS = 1MHz VDD 10 V, VGS 22 A VGS 11 A, VDD 3.5 A, VGS 22 A, VGS = 0 diF/ = 100 A/μs


Operation in this area is 0.1 limited by RDS(on) 0.01 1 shot Pulse 0.1 1

Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage

Static Drain to Source on State Resistance RDS(on) (m)

Static Drain to Source on State Resistance vs. Drain Current 



Search Part number : "HAT22" Included word is 15
Part Number Manufacturer Package Quantity Description
HAT2244WP-EL-E RENESAS 8-PowerWDFN 585 MOSFET N-CH 80V 30A WPAK
HAT2279H-EL-E RENESAS SC-100, SOT-669 6989 MOSFET N-CH 80V 30A 5LFPAK
HAT2210RJ R SOP-8 10353
HAT2200R-EL-E RENESAS SOP8 5001
HAT2210RJ01-EL-E RENESAS SOP8 16086
HAT2250R-EL-E RENESAS SOP-8 14268
HAT2279H-EL-H RENESAS LFPAK 831
HAT2279N-EL-E RENESAS 8-PowerSOIC (0.154", 3.90mm Width) 8659 MOSFET N-CH 80V 30A 5LFPAK
HAT2200WP RENESAS WPAK 3560
HAT2210RJ-EL-E RENESAS SOP-8 25670
HAT2254R RENESAS SOP8 6509
HAT2200WP-EL-E RENESAS WPAK 14955
HAT2215R R SOIC-8 3560
HAT2254R-EL-E SOP-8 88
HAT2280R RENESAS 0633+ 105
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