HAT2024R-EL-E
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Manufacturer Part#:

HAT2024R-EL-E

Product Category: IC Chips
Manufacturer: RENESAS
Description:
  datasheetHAT2024R-EL-E Datasheet
Package: SOP-8
Quantity: 5873 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: RENESAS
Product Category: IC Chips
Features, Applications

Features, Applications

Silicon N Channel Power MOS FET High Speed Power Switching

Features

For Automotive Application (at Type Code "J") Low on-resistance Capable 4 V gate drive High density mounting


Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: HAT2028R HAT2028RJ Symbol VDSS VGSS ID (pulse) IDR IAP EAR


PW 10 μs, duty cycle 1% 1 Drive operation: When using the glass epoxy board (FR4 mm), s 2 Drive operation: When using the glass epoxy board (FR4 mm), 10 s Value at Tch Rg 50


Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current HAT2028R HAT2028RJ Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min Typ Max Unit V ns Test Conditions = 10 mA, VGS = ±100 μA, VDS = 0 VGS ±16 V, VDS = 0 VDS 60 V, VGS = 0 VDS 48 V, VGS = 125°C VDS 1 mA Note 2 A, VGS 2 A, VGS 4 V Note 2 A, VDS 10 V VDS 10 V VGS MHz VGS 2 A, VDD 30 V


Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 5. Pulse test


4.0 100 Test Condition: When using the glass epoxy board (FR4 mm), 10 s

Operation in this area is limited by RDS (on) 25°C 1 shot Pulse 1 Drive Operation 1 3

Note 6: When using the glass epoxy board (FR4 mm)

Drain to Source Saturation Voltage vs. Gate to Source Voltage

Static Drain to Source on State Resistance vs. Drain Current



Search Part number : "HAT20" Included word is 15
Part Number Manufacturer Package Quantity Description
HAT2029R N/A SOP-8P 55860
HAT2036R-EL-E SOP-8 4060
HAT2045TWS HITACHI TSSOP 108
HAT2064 HIT SOIC-8 3147
HAT2085R-EL-E RENESAS SOP8 35699
HAT2042T HA TSSOP8 705
HAT2022R HITACHI SOP-8 5860
HAT2099H02-EL-E RENESAS SOT-669 4157
HAT2071R-EL HIT SOP 3466
HAT2027RJ R SOP-8 53360
HAT2033RJ R SOP8 53360
HAT2053M-EL-E RENESAS SSOP8 35342
HAT2099H-EL RENESAS SC-100, SOT-669 3930 MOSFET N-CH 30V 50A LFPAK
HAT2022R-EL HITACHI SOP8 19548
HAT2028R R SOP8 53360
HAT2024R-EL-E RELATED PRODUCT PICTURE
left
  • HAT2029R
  • HAT2036R-EL-E
  • HAT2045TWS
  • HAT2064
  • HAT2085R-EL-E
  • HAT2042T
  • HAT2022R
  • HAT2099H02-EL-E
  • HAT2071R-EL
  • HAT2027RJ
  • HAT2033RJ
  • HAT2053M-EL-E
  • HAT2099H-EL
  • HAT2022R-EL
  • HAT2028R
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