H11B2
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Manufacturer Part#:

H11B2

Product Category: IC Chips
Manufacturer: Vishay Semiconductor Opto Division
Description: OPTOISO 5.3KV DARL W/BASE 6DIP
  datasheetH11B2 Datasheet
Package: DIP-6
Quantity: 10329 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Semiconductor Opto Division
Product Category: IC Chips
Series: -
Packaging: Tube
Package-Case: 6-DIP (0.300", 7.62mm)
Input-Type: DC
Operating-Temperature: -55°C ~ 100°C
Mounting-Type: Through Hole
Output-Type: Darlington with Base
Number-of-Channels: 1
Supplier-Device-Package: 6-DIP
Configuration: 1 Channel
Current-Output-Channel: 100mA
Voltage-Output-Max: 25V
Current-DC-Forward-If-Max: 60mA
Voltage-Isolation: 5300Vrms
Voltage-Forward-Vf-Typ: 1.1V
Current-Transfer-Ratio-Min: 200% @ 1mA
Current-Transfer-Ratio-Max: -
Turn-On-Turn-Off-Time-Typ: 5μs, 30μs
Rise-Fall-Time-Typ: -
Vce-Saturation-Max: 1V
Pd-Power-Dissipation: 260 mW
Maximum-Operating-Temperature: + 100 C
Minimum-Operating-Temperature: - 55 C
Vf-Forward-Voltage: 1.5 V
Isolation-Voltage: 5300 Vrms
Vr-Reverse-Voltage: 3 V
If-Forward-Current: 60 mA
Package-Case: DIP-6
Maximum-Collector-Current: 100 mA
Maximum-Collector-Emitter-Voltage: 30 V
Maximum-Collector-Emitter-Saturation-Voltage: 1 V
Features, Applications

Features, Applications


Optocoupler, Photodarlington Output, High Gain, with Base Connection

FEATURES

Coupling capacitance, 0.5 pF Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


The H11B2, H11B3 are industry standard optocouplers, consisting of a gallium arsenide infrared LED and a silicon photodarlington. UL1577, file no. E52744 system code J DIN EN 60747-5-5 (VDE 0884) available with option 1


PART H11B1-X009 H11B2-X009 Note For additional information on the available options refer to option information. REMARKS CTR 500 DIP-6 CTR 200 DIP-6 CTR 100 DIP-6 CTR 500 SMD-6 (option 7) CTR 500 SMD-6 (option 9) CTR 200 SMD-6 (option 9)


PARAMETER INPUT Reverse voltage Forward continuous current Power dissipation Derate linearly from 25 °C OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage Collector current (continuous) Power dissipation Derate linearly from 25 °C BVCEO BVECO BVCBO IC Pdiss mA mW mW/°C VR IF Pdiss mA mW mW/°C TEST CONDITION SYMBOL VALUE UNIT


PARAMETER COUPLER Isolation test voltage between emitter and detector Creepage distance Clearance distance Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Total package dissipation (LED plus detector) Derate linearly from 25 °C Storage temperature Operating temperature Lead soldering time 260 °C Tstg Tamb VIO 500 V, Tamb 25 °C VIO 500 V, Tamb 100 °C CTI RIO Ptot VISO 10 mW mW/°C °C s VRMS mm


Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.


PARAMETER INPUT Forward voltage Reverse current Junction capacitance OUTPUT Collector emitter breakdown voltage Emitter collector breakdown voltage Collector base breakdown voltage Collector emitter leakage current COUPLER Saturation voltage collector-emitter Capacitance (input to output) = 1 mA, 1 mA VCEsat CIO = 1 mA, 0 mA VCE 0 mA BVCEO BVECO BVCBO ICEO = 1 MHz μA pF TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT


Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.


PARAMETER DC current transfer ratio TEST CONDITION VCE 1 mA PART H11B2 H11B3 SYMBOL CTRDC MIN. 200 100 TYP. MAX. UNIT %


PARAMETER Switching times TEST CONDITION = 5 mA, VCE = 100 SYMBOL ton toff MIN. TYP. 5 30 MAX. UNIT μs



Fig. 2 - Normalized Non-Saturated and Saturated CTRCE vs. LED Current

Fig. 4 - Normalized Non-Saturated and Saturated Collector Emitter Current vs. LED Current 



Search Part number : "H11B2" Included word is 7
Part Number Manufacturer Package Quantity Description
H11B255 Fairchild Semiconductor 6-DIP (0.300", 7.62mm) 5560 OPTOISO 5.3KV DARL W/BASE 6DIP
H11B255SM FAIRCHILD SOP-6 1330
H11B255SR2M FAIRCHILD SOP-6 1330
H11B255VM FAIRCHILD DIP-6 1330
H11B2SM FAIRCHILD SOP-6 2310
H11B2SR2M FSC SOP-6 5310
H11B2VM FAIRCHILD DIP-6 2310
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