FQB140N03L
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FQB140N03L

Product Category: IC Chips
Manufacturer: FAIRCHILD
Description:
  datasheetFQB140N03L Datasheet
Package: SOT263
Quantity: 7760 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: FAIRCHILD
Product Category: IC Chips
Features, Applications

Features, Applications


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. D


Features

140A, 30V, RDS(on) = 0.0045 @VGS 10 V Low gate charge ( typical 73 nC) Low Crss ( typical 580 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating


Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed


Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25°C) *


Power Dissipation (TC 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds


Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 40 62.5 Units °C/W


* When mounted on the minimum pad size recommended (PCB Mount)

BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 250 μA, Referenced to 25°C VDS 30 V, VGS 0 V VDS = 150°C VGS 20 V, VDS 0 V VGS -20 V, VDS V/°C μA nA


VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, 250 μA VGS 70 A VGS =70 A VDS 70 A


Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS 25 V, VGS = 1.0 MHz pF


td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 25


IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS 140 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS 140 A, dIF = 100 A/μs


Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature = 36μH, IAS = 140A, VDD 25 , Starting 25°C 3. ISD 140A, di/dt 300A/μs, VDD BVDSS, Starting 25°C 4. Pulse Test : Pulse width 300μs, Duty cycle 2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package



Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature



Search Part number : "FQB14" Included word is 2
Part Number Manufacturer Package Quantity Description
FQB140N03LTM FAIRCHILD TO-263 2949
FQB14N30TM FAIRCHILD TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 169911 MOSFET N-CH 300V 14.4A D2PAK
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