FP25R12KT3
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Manufacturer Part#:

FP25R12KT3

Product Category: IC Chips
Manufacturer: INFINEON
Description: IGBT Modules N-CH 1.2KV 40A
  datasheetFP25R12KT3 Datasheet
Package: Module
Quantity: 118 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: INFINEON
Product Category: IC Chips
Product: IGBT Silicon Modules
Mounting-Style: Screw
Package-Case: Econo 2
Configuration: Hex
Maximum-Operating-Temperature: + 125 C
Minimum-Operating-Temperature: - 40 C
Collector-Emitter-Voltage-VCEO-Max: 1200 V
Continuous-Collector-Current-at-25-C: 40 A
Maximum-Gate-Emitter-Voltage: +/- 20 V
Features, Applications

Features, Applications


Diode Gleichrichter/ Diode Rectifier Periodische Ruckw. Spitzensperrspannung repetitive peak reverse voltage Durchlasstrom Grenzeffektivwert RMS forward current per chip Dauergleichstrom DC forward current Stosstrom Grenzwert surge forward current Grenzlastintegral t - value


Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral I2t - value = 10ms, Tvj 125°C IF IFRM = 1 ms, 80 °C VCES IC,nom. IC ICRM Ptot VGES 20V


Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: A.Schulz approved by: M.Hierholzer ms IF IFRM = 1 ms, = 25°C VCES IC,nom. IC ICRM Ptot VGES 20V


Modul Isolation/ Module Isolation Isolations-Prufspannung insulation test voltage RMS, = 50 Hz, = 1 min. NTC connected to Baseplate VISOL 2,5 kV


Diode Gleichrichter/ Diode Rectifier Durchlasspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Tvj = 150°C, Tvj = 150°C Tvj = 150°C Tvj A VF V(TO) rT IR RAA'+CC'


Modul Leitungswiderstand, Anschlusse-Chip = 25°C lead resistance, terminals-chip Transistor Wechselrichter/ Transistor Inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlusverhalten SC Data VCE = VGE, Tvj = 25°C,


1 mA VGE(TO) Cies 1200 V ICES IGES V 27 Ohm 27 Ohm V 27 Ohm 27 Ohm V 27 Ohm 27 Ohm V 27 Ohm 27 Ohm V 27 Ohm V 27 Ohm nH 27 Ohm V 2000 A/μs ISC Eoff Eon tf td,off tr td,on VCE sat 4,5 -


VGE = ±15V, Tvj RG = VGE = ±15V, Tvj IC = INenn, VCC = VGE = ±15V, Tvj RG = VGE = ±15V, Tvj IC = INenn, VCC = VGE = ±15V, Tvj RG = VGE = ±15V, Tvj IC = INenn, VCC = VGE = ±15V, Tvj RG = VGE = ±15V, Tvj IC = INenn, VCC IC = INenn, VCC tP 10μs, VGE RG = VCC = dI/dt = VGE = ±15V, Tvj RG = VGE = ±15V, Tvj RG =


Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse-Chip = 25°C lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlasspannung forward voltage Ruckstromspitze peak reverse recovery current Sperrverzogerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LCE RCC'+EE' -


Transistor Brems-Chopper/ Transistor Brake-Chopper VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazitat input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Schaltverluste und -bedingungen Switching losses and conditions VCE = VGE, Tvj = 25°C,


Diode Brems-Chopper/ Diode Brake-Chopper Tvj = 25°C, Durchlasspannung forward voltage Tvj = 125°C, Schaltverluste und -bedingungen Switching losses and conditions NTC-Widerstand/ NTC-Thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value


Search Part number : "FP25R" Included word is 7
Part Number Manufacturer Package Quantity Description
FP25R12KE3 EUPEC IGBT 128 IGBT Modules 1200V 25A PIM
FP25R12KT4 INFINEON IGBT 101 IGBT Modules IGBT 1200V 25A
FP25R12W2T4 INFINEON 111 IGBT Modules N-CH 1.2KV 39A
FP25R12KS4C Infineon MODULE 78 IGBT Modules 1200V 25A PIM
FP25R12W2T4 Infineon MODULE 111
FP25R12KT3 eupec MODULE 118
FP25R12KE3 eupec MODULE 128
FP25R12KT3 RELATED PRODUCT PICTURE
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