CY25CAJ-8F-T13
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Manufacturer Part#:

CY25CAJ-8F-T13

Product Category: IC Chips
Manufacturer: RENESAS
Description:
  datasheetCY25CAJ-8F-T13 Datasheet
Package: VSON-8
Quantity: 22070 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: RENESAS
Product Category: IC Chips
Features, Applications

Features

Ultra small surface mount package (VSON-8) VCES: 400 V ICM: 150 A Drive voltage: 4 V

PIN 3 is for the Gate drive only. Note that current from the main circuit cannot flow into this section. (Please see page 3)


Applications

Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulse) Junction temperature Storage temperature Symbol VCES VGES VGEM ICM Tj Tstg Ratings to +150 Unit °C Conditions VGE 0 V VCE 0 V VCE 400 μF (see performance curve)


Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Symbol V(BR)CES ICES IGES VGE(th) VCE(sat) Cies Min. 450 0.5 Typ. 4.0 3400 Max. Unit V pF Test conditions = 1 mA, VGE 0 V VCE 400 V, VGE 0 V VGE ±8 V, VCS 0 V VCE 150 A, VGE 4 V VCE 25 V, VGE = 1MHz


Maximum Collector Current vs. Gate - Emitter Voltage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And turn-off dv/dt must become less than 400 V/ μs. In general, when RG (off) it is satisfied. 3. The ground of the drive signal must be connected to pin 3 only. If the emitter terminal pins 1 and 2 in which a large currents flow are given to the device as the drive signal emitter, the device may be damaged due to large currents since the specified gate voltage is not applied to the IGBT within the device. 4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe A : full luminescence condition) of main capacitor. (CM = 400 μF) Repetition period under full luminescence condition is over 3 seconds. 5. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven 6 V.

Search Part number : "CY25C" Included word is 3
Part Number Manufacturer Package Quantity Description
CY25CAH-8F-T13 renesas QFN 98973
CY25CAH-8F-T13 F10V RENESAS VSON-8 18360
CY25CAH-8F-T13#F10 RENESAS SOP 10862
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