CEH3456
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Manufacturer Part#:

CEH3456

Product Category: IC Chips
Manufacturer: CET
Description:
  datasheetCEH3456 Datasheet
Package: TSOP-6
Quantity: 99553 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: CET
Product Category: IC Chips
Features, Applications

N-Channel Enhancement Mode Field Effect Transistor FEATURES

30V, 5.5A, RDS(ON) = 42m @VGS = 10V. RDS(ON) = 59m @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. G(3) D(1,2,5,6,)


Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units

Maximum Power Dissipation Operating and Store Temperature Range

Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W

Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 1.7A VDS = 6A, VGS = 10V VDD = 1A, VGS = 10V, RGEN A V


25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 250μA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V VGS = VDS, = 250μA VGS = 6A VGS = 4.9A VDS = 6A Min Typ Max Units V


Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, < 5 sec. c.Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.


VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics

TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature

TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature

VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current

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