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SIS892ADN-T1-GE3
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Manufacturer Part#:

SIS892ADN-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 28A PPAK 1212
  SIS892ADN-T1-GE3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 158 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIS892ADN-GE3
Mounting-Style: SMD/SMT
Tradename: ThunderFET TrenchFET
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 52W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 550pF @ 50V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 28A (Tc)
Rds-On-Max-Id-Vgs: 33 mOhm @ 10A, 10V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 19.5nC @ 10V
Pd-Power-Dissipation: 52 W
Id-Continuous-Drain-Current: 28 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Vgs-th-Gate-Source-Threshold-Voltage: 3 V
Rds-On-Drain-Source-Resistance: 33 mOhms
Transistor-Polarity: N-Channel
Qg-Gate-Charge: 6.1 nC
Search Part number : "SIS89" Included word is 2
Part Number Manufacturer Package Quantity Description
SIS890DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 6845 MOSFET N-CH 100V 30A 1212-8
SIS894DN-T1-E3 VISHAY QFN8 35860
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