SI7810DN-T1-E3
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Manufacturer Part#:

SI7810DN-T1-E3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 100V 3.4A 1212-8
  datasheetSI7810DN-T1-E3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 173876 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7810DN-T1
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 1.5W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 3.4A (Ta)
Rds-On-Max-Id-Vgs: 62 mOhm @ 5.4A, 10V
Vgs-th-Max-Id: 4.5V @ 250μA
Gate-Charge-Qg-Vgs: 17nC @ 10V
Pd-Power-Dissipation: 1.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 15 ns
Rise-Time: 15 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 3.4 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Rds-On-Drain-Source-Resistance: 62 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 20 ns
Typical-Turn-On-Delay-Time: 10 ns
Channel-Mode: Enhancement
Search Part number : "SI781" Included word is 6
Part Number Manufacturer Package Quantity Description
SI7810DN SI QFN1212-8 4865
SI7810DN-T1 VISHAY QFN 1138
SI7812DN VISHAY POWERP 86
Si7812DN-T1-E3 VISHAY PowerPAK® 1212-8 53160 MOSFET N-CH 75V 16A 1212-8
SI7812DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 25660 MOSFET N-CH 75V 16A 1212-8 PPAK
SI7818DN-T1-E3 VISHAY PowerPAK® 1212-8 36206 MOSFET N-CH 150V 2.2A 1212-8
SI7810DN-T1-E3 RELATED PRODUCT PICTURE
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  • SI7812DN
  • Si7812DN-T1-E3
  • SI7812DN-T1-GE3
  • SI7818DN-T1-E3
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