SIR414DP-T1-GE3
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Manufacturer Part#:

SIR414DP-T1-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
  datasheetSIR414DP-T1-GE3 Datasheet
Package: PowerPAK® SO-8
Quantity: 1130 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIR414DP-GE3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SO-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR SO-8
Configuration: Single Quad Drain Triple Source
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 83W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 40V
Input-Capacitance-Ciss-Vds: 4750pF @ 20V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 50A (Tc)
Rds-On-Max-Id-Vgs: 2.8 mOhm @ 20A, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 117nC @ 10V
Pd-Power-Dissipation: 5.4 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 13 ns
Rise-Time: 22 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 50 A
Vds-Drain-Source-Breakdown-Voltage: 40 V
Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V
Rds-On-Drain-Source-Resistance: 2.3 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 42 ns
Typical-Turn-On-Delay-Time: 33 ns
Forward-Transconductance-Min: 102 S
Channel-Mode: Enhancement
Search Part number : "SIR41" Included word is 5
Part Number Manufacturer Package Quantity Description
SIR410DP SI QFN-8 476
SIR410DP-T1-GE3 VISHAY PowerPAK® SO-8 672 MOSFET N-CH 20V 35A PPAK SO-8
SIR416DP-T1-GE3 VISHAY PowerPAK® SO-8 760 MOSFET N-CH 40V 50A PPAK SO-8
SIR418DP VISHAY QFN8 658
SiR418DP-T1-E3 VISHAY QFN8 35860
SIR414DP-T1-GE3 RELATED PRODUCT PICTURE
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  • SIR410DP
  • SIR410DP-T1-GE3
  • SIR416DP-T1-GE3
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