SI7540DP-T1-GE3
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Manufacturer Part#:

SI7540DP-T1-GE3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
  datasheetSI7540DP-T1-GE3 Datasheet
Package: PowerPAK® SO-8 Dual
Quantity: 540 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI7540DP-GE3
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SO-8 Dual
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: PowerPAKR SO-8 Dual
Configuration: Single
FET-Type: N and P-Channel
Power-Max: 1.4W
Transistor-Type: 1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 7.6A, 5.7A
Rds-On-Max-Id-Vgs: 17 mOhm @ 11.8A, 4.5V
Vgs-th-Max-Id: 1.5V @ 250μA
Gate-Charge-Qg-Vgs: 17nC @ 4.5V
Pd-Power-Dissipation: 3.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 50 ns 42 ns
Rise-Time: 50 ns 42 ns
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: 11.8 A
Vds-Drain-Source-Breakdown-Voltage: 12 V
Rds-On-Drain-Source-Resistance: 14 mOhms 26 mOhms
Transistor-Polarity: N-Channel P-Channel
Typical-Turn-Off-Delay-Time: 60 ns 54 ns
Typical-Turn-On-Delay-Time: 30 ns 35 ns
Channel-Mode: Enhancement
Search Part number : "SI754" Included word is 2
Part Number Manufacturer Package Quantity Description
SI7540DP-T1 VISHAY NA 1162
SI7540DP-T1-E3 Vishay Siliconix PowerPAK® SO-8 Dual 37628 MOSFET N/P-CH 12V 7.6A PPAK SO-8
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