Si7252DP-T1-GE3
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Manufacturer Part#:

Si7252DP-T1-GE3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 100V 36.7A PPAK 8SO
  datasheetSi7252DP-T1-GE3 Datasheet
Package: POWERPAKR SO-8 DUAL
Quantity: 1165 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.017870 oz
Mounting-Style: SMD/SMT
Tradename: ThunderFET TrenchFET
Package-Case: PowerPAKR SO-8 Dual
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: PowerPAKR SO-8 Dual
Configuration: Dual
FET-Type: 2 N-Channel (Dual)
Power-Max: 46W
Transistor-Type: 2 N-Channel
Drain-to-Source-Voltage-Vdss: 100V
Input-Capacitance-Ciss-Vds: 1170pF @ 50V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 36.7A
Rds-On-Max-Id-Vgs: 17 mOhm @ 15A, 10V
Vgs-th-Max-Id: 3.5V @ 250μA
Gate-Charge-Qg-Vgs: 27nC @ 10V
Pd-Power-Dissipation: 46 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 7 ns
Rise-Time: 12 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 36.7 A
Vds-Drain-Source-Breakdown-Voltage: 100 V
Vgs-th-Gate-Source-Threshold-Voltage: 1.5 V to 3.5 V
Rds-On-Drain-Source-Resistance: 20 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 18 ns
Typical-Turn-On-Delay-Time: 12 ns
Qg-Gate-Charge: 17.5 nC
Forward-Transconductance-Min: 40 S
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