STW6NA90
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Manufacturer Part#:

STW6NA90

Product Category: IC Chips
Manufacturer: ST
Description:
  datasheetSTW6NA90 Datasheet
Package: TO-247
Quantity: 141 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: ST
Product Category: IC Chips
Features, Applications

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

TYPICAL RDS(on) ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD TO-247


APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)


Symbol V DS VDGR ) P tot Parameter Drain-source Voltage = 0) Drain- gate Voltage k ) Gate-source Voltage Drain Current (continuous) 25 C Drain Current (continuous) o C Drain Current (pulsed) Total Dissipation 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature


Pulse width limited by safe operating area

R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose


Symbol E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited T j max, < 1%) Single Pulse Avalanche Energy (starting AR , VDD 25 V) Max Value 6 600 Unit A mJ


ELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified) OFF

Symbol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Conditions μ A VGS = 0 Min. Typ. Max. Unit μA nA


Zero Gate Voltage DS = Max Rating Drain Current DS = Max Rating Gate-body Leakage Current 30 V

Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance DS = VGS 10 V Test Conditions A ID Min. 2.25 Typ. 3 1.45 Max. 3.75 1.9 Unit V A


Symbol ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions > I D(on) x R DS(on)max = 25 MHz = 0 Min. 5 Typ. Max. Unit S pF


Symbol t d(on) Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 10 V Min. Typ. Max. 45 105 Unit ns nC


Symbol t r(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions 10 V Min. Typ. 7 31 Max. 12 47 Unit ns


Symbol SD I SDM rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current = 0 di/dt 100 V Test Conditions Min. Typ. Max. 24 1.6 Unit μC A


Pulsed: Pulse duration = 300 μs, duty cycle 1.5 % Pulse width limited by safe operating area

Search Part number : "STW6N" Included word is 5
Part Number Manufacturer Package Quantity Description
STW6N100E ST TO247 598
STW6N120K3 STMicroelectronics TO-247-3 4960 MOSFET N-CH 1200V 6A TO-247
STW6N95K5 ST TO-247-3 522 MOSFET N-CH 950V 9A TO-274
STW6NB90 ST TO-247 2518
STW6NC90Z ST TO-247 153
STW6NA90 RELATED PRODUCT PICTURE
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  • STW6N100E
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  • STW6N95K5
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