FDB035AN06A0
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Manufacturer Part#:

FDB035AN06A0

Product Category: FETs - Single
Manufacturer: Fairchild Semiconductor
Description: MOSFET N-CH 60V 80A TO-263AB
  datasheetFDB035AN06A0 Datasheet
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Quantity: 28212 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Fairchild Semiconductor
Product Category: FETs - Single
Series: PowerTrenchR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: FDB035AN06A0_NL
Unit-Weight: 0.046296 oz
Mounting-Style: SMD/SMT
Package-Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technology: Si
Operating-Temperature: -55°C ~ 175°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: TO-263AB
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 310W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: 6400pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 22A (Ta), 80A (Tc)
Rds-On-Max-Id-Vgs: 3.5 mOhm @ 80A, 10V
Vgs-th-Max-Id: 4V @ 250μA
Gate-Charge-Qg-Vgs: 124nC @ 10V
Pd-Power-Dissipation: 310 W
Maximum-Operating-Temperature: + 175 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 13 ns
Rise-Time: 93 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 80 A
Vds-Drain-Source-Breakdown-Voltage: 60 V
Rds-On-Drain-Source-Resistance: 3.2 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 38 ns
Typical-Turn-On-Delay-Time: 15 ns
Channel-Mode: Enhancement
Search Part number : "FDB03" Included word is 4
Part Number Manufacturer Package Quantity Description
FDB031N08 FAIRCHILD TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 10409 MOSFET N-CH 75V 120A D2PAK
FDB035AN06AO FSC TO-263 730
FDB035N10A FAIRCHILD TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 520 MOSFET N-CH 100V 120A D2PAK
FDB039N06 FAIRCHILD TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 3476 MOSFET N-CH 60V 120A D2PAK
FDB035AN06A0 RELATED PRODUCT PICTURE
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