SI3993CDV-T1-GE3
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Manufacturer Part#:

SI3993CDV-T1-GE3

Product Category: FETs - Arrays
Manufacturer: VISHAY
Description: MOSFET 2P-CH 30V 2.9A 6-TSOP
  datasheetSI3993CDV-T1-GE3 Datasheet
Package: SOT-23-6
Quantity: 52650 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: VISHAY
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Tape & Reel (TR)
Unit-Weight: 0.000705 oz
Mounting-Style: SMD/SMT
Tradename: TrenchFET
Package-Case: SOT-23-6 Thin, TSOT-23-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 6-TSOP
Configuration: Dual
FET-Type: 2 P-Channel (Dual)
Power-Max: 1.4W
Transistor-Type: 2 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 210pF @ 15V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 2.9A
Rds-On-Max-Id-Vgs: 111 mOhm @ 2.5A, 10V
Vgs-th-Max-Id: 2.2V @ 250μA
Gate-Charge-Qg-Vgs: 8nC @ 10V
Pd-Power-Dissipation: 1.15 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 12 ns
Rise-Time: 16 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 2.2 A
Vds-Drain-Source-Breakdown-Voltage: - 30 V
Vgs-th-Gate-Source-Threshold-Voltage: - 3 V
Rds-On-Drain-Source-Resistance: 133 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 17 ns
Typical-Turn-On-Delay-Time: 10 ns
Qg-Gate-Charge: 3.1 nC
Forward-Transconductance-Min: 4 S
Channel-Mode: Enhancement
Search Part number : "SI399" Included word is 5
Part Number Manufacturer Package Quantity Description
Si3991DV-T1-GE3 VISHAY TSOP-6 4060
SI3993 VISHAY SOT163 4060
SI3993DV VISHAY SOT-163 3860
SI3993DV-T1-E3 Vishay Siliconix SOT-23-6 Thin, TSOT-23-6 10360 MOSFET 2P-CH 30V 1.8A 6-TSOP
SI3993DV-T1-GE3 Vishay Siliconix SOT-23-6 Thin, TSOT-23-6 31160 MOSFET 2P-CH 30V 1.8A 6-TSOP
SI3993CDV-T1-GE3 RELATED PRODUCT PICTURE
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  • Si3991DV-T1-GE3
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