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Product Category: FETs - Arrays
Manufacturer: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TSMT6
  datasheetQS6J11TR Datasheet
Package: SOT-23-6 Thin, TSOT-23-6
Quantity: 6875 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Rohm Semiconductor
Product Category: FETs - Arrays
Series: QS6J11
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: SC-74, SOT-457
Technology: Si
Operating-Temperature: 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: TSMT6
Configuration: Dual
FET-Type: 2 P-Channel (Dual)
Power-Max: 600mW
Transistor-Type: 2 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: 770pF @ 6V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 2A
Rds-On-Max-Id-Vgs: 105 mOhm @ 2A, 4.5V
Vgs-th-Max-Id: 1V @ 1mA
Gate-Charge-Qg-Vgs: 6.5nC @ 4.5V
Pd-Power-Dissipation: 600 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 35 ns
Rise-Time: 17 ns
Vgs-Gate-Source-Voltage: 10 V
Id-Continuous-Drain-Current: 2 A
Vds-Drain-Source-Breakdown-Voltage: - 12 V
Rds-On-Drain-Source-Resistance: 75 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 65 ns
Typical-Turn-On-Delay-Time: 10 ns
Qg-Gate-Charge: 6.5 nC
Forward-Transconductance-Min: 2 S
Channel-Mode: Enhancement
Search Part number : "QS6J1" Included word is 3
Part Number Manufacturer Package Quantity Description
QS6J1 ROHM SOT163 4868
QS6J11 ROHM SOT-163 10060
QS6J1TR Rohm Semiconductor SOT-23-6 Thin, TSOT-23-6 33360 MOSFET 2P-CH 20V 1.5A TSMT6
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