APT65GP60B2G
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Manufacturer Part#:

APT65GP60B2G

Product Category: IGBTs - Single
Manufacturer: Microsemi Corporation
Description: IGBT 600V 100A 833W TMAX
  datasheetAPT65GP60B2G Datasheet
Package: TO-247-3 Variant
Quantity: 677 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Microsemi Corporation
Product Category: IGBTs - Single
Series: POWER MOS 7R
Packaging: Tube
Unit-Weight: 1.340411 oz
Mounting-Style: Through Hole
Package-Case: TO-247-3 Variant
Input-Type: Standard
Mounting-Type: Through Hole
Supplier-Device-Package: *
Power-Max: 833W
Reverse-Recovery-Time-trr: -
Current-Collector-Ic-Max: 100A
Voltage-Collector-Emitter-Breakdown-Max: 600V
IGBT-Type: PT
Current-Collector-Pulsed-Icm: 250A
Vce-on-Max-Vge-Ic: 2.7V @ 15V, 65A
Switching-Energy: 605μJ (on), 896μJ (off)
Gate-Charge: 210nC
Td-on-off-25°C: 30ns/91ns
Test-Condition: 400V, 65A, 5 Ohm, 15V
Search Part number : "APT65" Included word is 3
Part Number Manufacturer Package Quantity Description
APT65GP60JDQ2 APT Module 168 IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
APT65GP60L2DQ2G Microsemi Corporation TO-264-3, TO-264AA 78 IGBT 600V 198A 833W TO264
APT65GP60JDQ2 APT MODULE 168
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