APT45GP120B2DQ2G
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Manufacturer Part#:

APT45GP120B2DQ2G

Product Category: IGBTs - Single
Manufacturer: Microsemi Corporation
Description: IGBT 1200V 113A 625W TMAX
  datasheetAPT45GP120B2DQ2G Datasheet
Package: TO-247-3 Variant
Quantity: 82 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Microsemi Corporation
Product Category: IGBTs - Single
Series: POWER MOS 7R
Packaging: Tube
Mounting-Style: Through Hole
Tradename: POWER MOS 7 IGBT
Package-Case: TO-247-3 Variant
Input-Type: Standard
Mounting-Type: Through Hole
Supplier-Device-Package: *
Configuration: Single
Power-Max: 625W
Reverse-Recovery-Time-trr: -
Current-Collector-Ic-Max: 113A
Voltage-Collector-Emitter-Breakdown-Max: 1200V
IGBT-Type: PT
Current-Collector-Pulsed-Icm: 170A
Vce-on-Max-Vge-Ic: 3.9V @ 15V, 45A
Switching-Energy: 900μJ (on), 905μJ (off)
Gate-Charge: 185nC
Td-on-off-25°C: 18ns/100ns
Test-Condition: 600V, 45A, 5 Ohm, 15V
Pd-Power-Dissipation: 625 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Collector-Emitter-Voltage-VCEO-Max: 1.2 kV
Collector-Emitter-Saturation-Voltage: 3.3 V
Continuous-Collector-Current-at-25-C: 113 A
Gate-Emitter-Leakage-Current: 100 nA
Maximum-Gate-Emitter-Voltage: 30 V
Continuous-Collector-Current-Ic-Max: 113 A
Search Part number : "APT45" Included word is 5
Part Number Manufacturer Package Quantity Description
APT45GP120BG Microsemi Corporation TO-247-3 766 IGBT 1200V 100A 625W TO247
APT45GD120JDQ2 APT MODULE 147
APT45M75JN APT MODULE 168
APT45M100J APT MODULE 512 IGBT Transistors Power MOSFET - MOS8
APT45GP120JDQ2 Microsemi Corporation MODULE 652 IGBT 1200V 75A 329W SOT227
APT45GP120B2DQ2G RELATED PRODUCT PICTURE
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