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Product Category: FETs - Single
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A TO-264
  datasheetAPT37M100L Datasheet
Package: TO-264-3, TO-264AA
Quantity: 78 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Stock:78 Can Ship Immediately
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Manufacturer: Microsemi Corporation
Product Category: FETs - Single
Series: -
Packaging: Tube
Unit-Weight: 0.373904 oz
Mounting-Style: Through Hole
Tradename: POWER MOS 8
Package-Case: TO-264-3, TO-264AA
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Through Hole
Supplier-Device-Package: TO-264
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 1135W
Drain-to-Source-Voltage-Vdss: 1000V (1kV)
Input-Capacitance-Ciss-Vds: 9835pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 37A (Tc)
Rds-On-Max-Id-Vgs: 330 mOhm @ 18A, 10V
Vgs-th-Max-Id: 5V @ 2.5mA
Gate-Charge-Qg-Vgs: 305nC @ 10V
Pd-Power-Dissipation: 1.135 kW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 38 ns
Rise-Time: 40 ns
Vgs-Gate-Source-Voltage: 30 V
Id-Continuous-Drain-Current: 37 A
Vds-Drain-Source-Breakdown-Voltage: 1000 V
Vgs-th-Gate-Source-Threshold-Voltage: 4 V
Rds-On-Drain-Source-Resistance: 290 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 150 ns
Typical-Turn-On-Delay-Time: 44 ns
Qg-Gate-Charge: 305 nC
Forward-Transconductance-Min: 39 S
Channel-Mode: Enhancement
Search Part number : "APT37" Included word is 1
Part Number Manufacturer Package Quantity Description
APT37M100B2 APT TO-247-3 Variant 108 MOSFET N-CH 1000V 37A T-MAX
  • APT37M100B2
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