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IXFB60N80P
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Manufacturer Part#:

IXFB60N80P

Product Category: FETs - Single
Manufacturer: IXYS
Description: MOSFET N-CH 800V 60A PLUS264
  IXFB60N80P Datasheet
Package: TO-264-3, TO-264AA
Quantity: 72 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Stock:72 Can Ship Immediately
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Manufacturer: IXYS
Product Category: FETs - Single
Series: HiPerFET?, PolarHT?
Packaging: Tube
Unit-Weight: 0.056438 oz
Mounting-Style: Through Hole
Tradename: PolarHV HiPerFET
Package-Case: TO-264-3, TO-264AA
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Through Hole
Number-of-Channels: 1 Channel
Supplier-Device-Package: PLUS264?
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 1250W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 800V
Input-Capacitance-Ciss-Vds: 18000pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 60A (Tc)
Rds-On-Max-Id-Vgs: 140 mOhm @ 30A, 10V
Vgs-th-Max-Id: 5V @ 8mA
Gate-Charge-Qg-Vgs: 250nC @ 10V
Pd-Power-Dissipation: 1.25 kW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 26 ns
Rise-Time: 29 ns
Vgs-Gate-Source-Voltage: 30 V
Id-Continuous-Drain-Current: 60 A
Vds-Drain-Source-Breakdown-Voltage: 800 V
Vgs-th-Gate-Source-Threshold-Voltage: 5 V
Rds-On-Drain-Source-Resistance: 140 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 110 ns
Typical-Turn-On-Delay-Time: 36 ns
Qg-Gate-Charge: 250 nC
Forward-Transconductance-Min: 35 S
Channel-Mode: Enhancement
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