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SUD19P06-60-GE3
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Manufacturer Part#:

SUD19P06-60-GE3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 60V 18.3A TO-252
  SUD19P06-60-GE3 Datasheet
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity: 6060 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Unit-Weight: 0.050717 oz
Mounting-Style: SMD/SMT
Package-Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: TO-252, (D-Pak)
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 2.3W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: 1710pF @ 25V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 18.3A (Tc)
Rds-On-Max-Id-Vgs: 60 mOhm @ 10A, 10V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 40nC @ 10V
Pd-Power-Dissipation: 2.3 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 30 ns
Rise-Time: 9 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 18.3 A
Vds-Drain-Source-Breakdown-Voltage: - 60 V
Rds-On-Drain-Source-Resistance: 60 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 65 ns
Typical-Turn-On-Delay-Time: 8 ns
Channel-Mode: Enhancement
Search Part number : "SUD19" Included word is 6
Part Number Manufacturer Package Quantity Description
SUD19P06-60L SI TO252 18499
SUD19P06-60L-E3 Vishay Siliconix TO-252-3, DPak (2 Leads + Tab), SC-63 6747 MOSFET P-CH 60V 19A TO252
SUD19N20 VISHAY SOT-252 820
SUD19N20-90 VISHAY 24906
SUD19N20-90-E3 Vishay Siliconix TO-252-3, DPak (2 Leads + Tab), SC-63 56920 MOSFET N-CH 200V 19A DPAK
SUD19N20-90-T4-E3 VIS TO-252-3, DPak (2 Leads + Tab), SC-63 6060 MOSFET N-CH 200V 19A TO252
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