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RFD3055LESM9A
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Manufacturer Part#:

RFD3055LESM9A

Product Category: FETs - Single
Manufacturer: Fairchild Semiconductor
Description: MOSFET N-CH 60V 11A TO-252AA
  RFD3055LESM9A Datasheet
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity: 166650 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Fairchild Semiconductor
Product Category: FETs - Single
Series: -
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: RFD3055LESM9A_NL
Unit-Weight: 0.009184 oz
Mounting-Style: SMD/SMT
Package-Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Technology: Si
Operating-Temperature: -55°C ~ 175°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: TO-252AA
Configuration: Single
FET-Type: MOSFET N-Channel, Metal Oxide
Power-Max: 38W
Transistor-Type: 1 N-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: 350pF @ 25V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 11A (Tc)
Rds-On-Max-Id-Vgs: 107 mOhm @ 8A, 5V
Vgs-th-Max-Id: 3V @ 250μA
Gate-Charge-Qg-Vgs: 11.3nC @ 10V
Pd-Power-Dissipation: 38 W
Maximum-Operating-Temperature: + 175 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 39 ns
Rise-Time: 105 ns
Vgs-Gate-Source-Voltage: 16 V
Id-Continuous-Drain-Current: 11 A
Vds-Drain-Source-Breakdown-Voltage: 60 V
Rds-On-Drain-Source-Resistance: 107 mOhms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 22 ns
Typical-Turn-On-Delay-Time: 8 ns
Channel-Mode: Enhancement
Search Part number : "RFD30" Included word is 6
Part Number Manufacturer Package Quantity Description
RFD3055RLE HARRIS NA 830
RFD3055RLESM96 HARRIS TO-252 1308
RFD3055SM HARRIS TO-252-3, DPak (2 Leads + Tab), SC-63 9131 MOSFET N-CH 60V 12A DPAK
RFD3055SM9A FAIRCHILD TO-252-3, DPak (2 Leads + Tab), SC-63 17234 MOSFET N-CH 60V 12A DPAK
RFD3055 HARRIS TO-251-3 Short Leads, IPak, TO-251AA 23933 MOSFET N-CH 60V 12A IPAK
RFD3055LE Fairchild Semiconductor TO-251-3 Short Leads, IPak, TO-251AA 18337 MOSFET N-CH 60V 11A I-PAK
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