NTJS3151PT1G
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Manufacturer Part#:

NTJS3151PT1G

Product Category: FETs - Single
Manufacturer: ON Semiconductor
Description: MOSFET P-CH 12V 2.7A SOT-363
  datasheetNTJS3151PT1G Datasheet
Package: 6-TSSOP, SC-88, SOT-363
Quantity: 82369 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: ON Semiconductor
Product Category: FETs - Single
Series: NTJS3151P
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Package-Case: 6-TSSOP, SC-88, SOT-363
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: SC-88/SC70-6/SOT-363
Configuration: Single Quad Drain
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 625mW
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: 850pF @ 12V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 2.7A (Ta)
Rds-On-Max-Id-Vgs: 60 mOhm @ 3.3A, 4.5V
Vgs-th-Max-Id: 400mV @ 100μA
Gate-Charge-Qg-Vgs: 8.6nC @ 4.5V
Pd-Power-Dissipation: 625 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 1.5 ns
Rise-Time: 1.5 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: - 3.3 A
Vds-Drain-Source-Breakdown-Voltage: - 12 V
Rds-On-Drain-Source-Resistance: 133 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 3.5 ns
Typical-Turn-On-Delay-Time: 0.86 ns
Forward-Transconductance-Min: 15 S
Channel-Mode: Enhancement
Search Part number : "NTJS3" Included word is 1
Part Number Manufacturer Package Quantity Description
NTJS3157NT1G ON Semiconductor 6-TSSOP, SC-88, SOT-363 301571 MOSFET N-CH 20V 3.2A SOT-363
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