SI1539CDL-T1-GE3
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Manufacturer Part#:

SI1539CDL-T1-GE3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET N/P-CH 30V SOT363
  datasheetSI1539CDL-T1-GE3 Datasheet
Package: 6-TSSOP, SC-88, SOT-363
Quantity: 53360 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI1539CDL-GE3
Unit-Weight: 0.000988 oz
Mounting-Style: SMD/SMT
Tradename: TrenchFET
Package-Case: 6-TSSOP, SC-88, SOT-363
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: SOT-363
Configuration: 1 N-Channel 1 P-Channel
FET-Type: N and P-Channel
Power-Max: 340mW
Transistor-Type: 1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 28pF @ 15V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 700mA, 500mA
Rds-On-Max-Id-Vgs: 388 mOhm @ 600mA, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 1.5nC @ 10V
Pd-Power-Dissipation: 340 mW
Fall-Time: 15 ns 10 ns
Rise-Time: 25 ns 19 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 700 mA
Vds-Drain-Source-Breakdown-Voltage: 30 V
Rds-On-Drain-Source-Resistance: 323 mOhms 740 mOhms
Transistor-Polarity: N-Channel P-Channel
Typical-Turn-Off-Delay-Time: 14 ns 4 ns
Typical-Turn-On-Delay-Time: 26 ns 32 ns
Qg-Gate-Charge: 1 nC
Forward-Transconductance-Min: 1.2 S 0.6 S
Search Part number : "SI153" Included word is 4
Part Number Manufacturer Package Quantity Description
SI1539DL VISHAY SOT-363 3460
SI1539DL-T1 VISHAY SOT363 3053
SI1539DL-T1-E3 Vishay Siliconix 6-TSSOP, SC-88, SOT-363 4806 MOSFET N/P-CH 30V SC70-6
SI1539DL-T1-GE3 Vishay Siliconix 6-TSSOP, SC-88, SOT-363 53360 MOSFET N/P-CH 30V SC70-6
SI1539CDL-T1-GE3 RELATED PRODUCT PICTURE
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  • SI1539DL
  • SI1539DL-T1
  • SI1539DL-T1-E3
  • SI1539DL-T1-GE3
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