SI1926DL-T1-E3
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Manufacturer Part#:

SI1926DL-T1-E3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.37A SC-70-6
  datasheetSI1926DL-T1-E3 Datasheet
Package: 6-TSSOP, SC-88, SOT-363
Quantity: 4060 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI1926DL-E3
Unit-Weight: 0.000988 oz
Mounting-Style: SMD/SMT
Package-Case: 6-TSSOP, SC-88, SOT-363
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: SC-70-6 (SOT-363)
Configuration: Dual
FET-Type: 2 N-Channel (Dual)
Power-Max: 510mW
Transistor-Type: 2 N-Channel
Drain-to-Source-Voltage-Vdss: 60V
Input-Capacitance-Ciss-Vds: 18.5pF @ 30V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 370mA
Rds-On-Max-Id-Vgs: 1.4 Ohm @ 340mA, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 1.4nC @ 10V
Pd-Power-Dissipation: 510 mW
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 12 ns
Rise-Time: 12 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 370 mA
Vds-Drain-Source-Breakdown-Voltage: 60 V
Rds-On-Drain-Source-Resistance: 1.4 Ohms
Transistor-Polarity: N-Channel
Typical-Turn-Off-Delay-Time: 13 ns
Typical-Turn-On-Delay-Time: 6.5 ns
Channel-Mode: Enhancement
Search Part number : "SI192" Included word is 2
Part Number Manufacturer Package Quantity Description
SI1926DL-T1-GE3 Vishay Siliconix 6-TSSOP, SC-88, SOT-363 10060 MOSFET 2N-CH 60V 0.37A SOT363
SI1922EDH-T1-GE3 Vishay Siliconix 6-TSSOP, SC-88, SOT-363 935 MOSFET 2N-CH 20V 1.3A SOT-363
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