SI1469DH-T1-E3
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Manufacturer Part#:

SI1469DH-T1-E3

Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
  datasheetSI1469DH-T1-E3 Datasheet
Package: 6-TSSOP, SC-88, SOT-363
Quantity: 4060 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI1469DH-E3
Unit-Weight: 0.000265 oz
Mounting-Style: SMD/SMT
Package-Case: 6-TSSOP, SC-88, SOT-363
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: SC-70-6 (SOT-363)
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 2.78W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 20V
Input-Capacitance-Ciss-Vds: 470pF @ 10V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 2.7A (Tc)
Rds-On-Max-Id-Vgs: 80 mOhm @ 2A, 10V
Vgs-th-Max-Id: 1.5V @ 250μA
Gate-Charge-Qg-Vgs: 8.5nC @ 4.5V
Pd-Power-Dissipation: 1.5 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 15 ns 9 ns
Rise-Time: 48 ns 20 ns
Vgs-Gate-Source-Voltage: 12 V
Id-Continuous-Drain-Current: 3.2 A
Vds-Drain-Source-Breakdown-Voltage: - 20 V
Rds-On-Drain-Source-Resistance: 155 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 27 ns 22 ns
Typical-Turn-On-Delay-Time: 27 ns 5 ns
Channel-Mode: Enhancement
Search Part number : "SI146" Included word is 1
Part Number Manufacturer Package Quantity Description
SI1469DH-T1-GE3 VIS 6-TSSOP, SC-88, SOT-363 36360 MOSFET P-CH 20V 2.7A SC-70-6
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