SI3552DV-T1-E3
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Manufacturer Part#:

SI3552DV-T1-E3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6TSOP
  datasheetSI3552DV-T1-E3 Datasheet
Package: SOT-23-6 Thin, TSOT-23-6
Quantity: 19517 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SI3552DV-E3
Unit-Weight: 0.000705 oz
Mounting-Style: SMD/SMT
Tradename: TrenchFET
Package-Case: SOT-23-6 Thin, TSOT-23-6
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: 6-TSOP
Configuration: 1 N-Channel 1 P-Channel
FET-Type: N and P-Channel
Power-Max: 1.15W
Transistor-Type: 1 N-Channel 1 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: -
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: -
Rds-On-Max-Id-Vgs: 105 mOhm @ 2.5A, 10V
Vgs-th-Max-Id: 1V @ 250μA (Min)
Gate-Charge-Qg-Vgs: 3.2nC @ 5V
Pd-Power-Dissipation: 1.15 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 5 ns 7 ns
Rise-Time: 9 ns 12 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: 2.5 A
Vds-Drain-Source-Breakdown-Voltage: 30 V
Rds-On-Drain-Source-Resistance: 105 mOhms 175 mOhms
Transistor-Polarity: N-Channel P-Channel
Typical-Turn-Off-Delay-Time: 13 ns 12 ns
Typical-Turn-On-Delay-Time: 7 ns 8 ns
Channel-Mode: Enhancement
Search Part number : "SI355" Included word is 2
Part Number Manufacturer Package Quantity Description
SI3552DV-T1-GE3 Vishay Siliconix SOT-23-6 Thin, TSOT-23-6 20438 MOSFET N/P-CH 30V 6-TSOP
SI3554DV-T1-E3 VISHAY SOT163 91
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