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Product Category: FETs - Single
Manufacturer: Vishay Siliconix
Description: MOSFET P-CH 30V 18A PPAK 1212-8
  SIS413DN-T1-GE3 Datasheet
Package: PowerPAK® 1212-8
Quantity: 450 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Single
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Mounting-Style: SMD/SMT
Tradename: TrenchFET Power MOSFET
Package-Case: PowerPAKR 1212-8
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 1 Channel
Supplier-Device-Package: PowerPAKR 1212-8
Configuration: Single
FET-Type: MOSFET P-Channel, Metal Oxide
Power-Max: 52W
Transistor-Type: 1 P-Channel
Drain-to-Source-Voltage-Vdss: 30V
Input-Capacitance-Ciss-Vds: 4280pF @ 15V
FET-Feature: Standard
Current-Continuous-Drain-Id-25°C: 18A (Tc)
Rds-On-Max-Id-Vgs: 9.4 mOhm @ 15A, 10V
Vgs-th-Max-Id: 2.5V @ 250μA
Gate-Charge-Qg-Vgs: 110nC @ 10V
Pd-Power-Dissipation: 52 W
Maximum-Operating-Temperature: + 150 C
Minimum-Operating-Temperature: - 55 C
Fall-Time: 8 ns
Rise-Time: 11 ns
Vgs-Gate-Source-Voltage: 20 V
Id-Continuous-Drain-Current: - 18 A
Vds-Drain-Source-Breakdown-Voltage: - 30 V
Vgs-th-Gate-Source-Threshold-Voltage: - 1 V to - 2.5 V
Rds-On-Drain-Source-Resistance: 9.4 mOhms
Transistor-Polarity: P-Channel
Typical-Turn-Off-Delay-Time: 45 ns
Typical-Turn-On-Delay-Time: 11 ns
Qg-Gate-Charge: 35.4 nC
Forward-Transconductance-Min: 50 S
Channel-Mode: Enhancement
Search Part number : "SIS41" Included word is 6
Part Number Manufacturer Package Quantity Description
SIS414DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 866 MOSFET N-CH 30V 20A 1212-8 PPAK
SIS4101PT1G SIS SOT323 4060
SiS410DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 53561 MOSFET N-CH 20V 35A PPAK 1212-8
SIS412DN VISHAY 1212-8 15360
SIS412DN-T1-GE3 Vishay Siliconix PowerPAK® 1212-8 462013 MOSFET N-CH 30V 12A 1212-8 PPAK
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