SIA975DJ-T1-GE3
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Manufacturer Part#:

SIA975DJ-T1-GE3

Product Category: FETs - Arrays
Manufacturer: Vishay Siliconix
Description: MOSFET 2P-CH 12V 4.5A SC-70-6
  SIA975DJ-T1-GE3 Datasheet
Package: PowerPAK® SC-70-6 Dual
Quantity: 310350 PCS
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level(MSL): 3(168 Hours)
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Manufacturer: Vishay Siliconix
Product Category: FETs - Arrays
Series: TrenchFETR
Packaging: Digi-ReelR Alternate Packaging
Part-Aliases: SIA975DJ-GE3
Unit-Weight: 0.000988 oz
Mounting-Style: SMD/SMT
Package-Case: PowerPAKR SC-70-6 Dual
Technology: Si
Operating-Temperature: -55°C ~ 150°C (TJ)
Mounting-Type: Surface Mount
Number-of-Channels: 2 Channel
Supplier-Device-Package: PowerPAKR SC-70-6 Dual
Configuration: Dual
FET-Type: 2 P-Channel (Dual)
Power-Max: 7.8W
Transistor-Type: 2 P-Channel
Drain-to-Source-Voltage-Vdss: 12V
Input-Capacitance-Ciss-Vds: 1500pF @ 6V
FET-Feature: Logic Level Gate
Current-Continuous-Drain-Id-25°C: 4.5A
Rds-On-Max-Id-Vgs: 41 mOhm @ 4.3A, 4.5V
Vgs-th-Max-Id: 1V @ 250μA
Gate-Charge-Qg-Vgs: 26nC @ 8V
Pd-Power-Dissipation: 7.8 W
Maximum-Operating-Temperature: + 125 C
Minimum-Operating-Temperature: - 55 C
Vgs-Gate-Source-Voltage: 8 V
Id-Continuous-Drain-Current: - 4.5 A
Vds-Drain-Source-Breakdown-Voltage: - 12 V
Vgs-th-Gate-Source-Threshold-Voltage: - 1 V
Rds-On-Drain-Source-Resistance: 41 mOhms
Transistor-Polarity: P-Channel
Qg-Gate-Charge: 17 nC
Forward-Transconductance-Min: 12 S
Search Part number : "SIA97" Included word is 1
Part Number Manufacturer Package Quantity Description
SIA972DH-T1-GE3 VISHAY SOT-363 4060
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